Thin film transistor, array substrate and display device

US9620648B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Meili Wang · Beijing, CN
• Longbao Xin · Beijing, CN

Key dates

• Filing date: Nov 28, 2014
• Grant date: Apr 11, 2017
• Expiry date: Nov 28, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

The invention provides a thin film transistor, an array substrate and a display device. The thin film transistor comprises a conductive oxygen vacancy reducing layer for reducing oxygen vacancies in an active layer. The oxygen vacancy reducing layer is disposed between the active layer and a source and/or the active layer and a drain. With the oxygen vacancy reducing layer, the number of the oxygen vacancies in the active layer is decreased greatly, which improves transmission rate of carriers and simultaneously reduces value of subthreshold swing of the thin film transistor.