Patent · US Active

Method for improved growth of two-dimensional transition metal dichalcogenides

US9620665B1 · kind B1 · utility

10Cited by

3References

11Claims

0Family size

Assignee

The United States of America as represented by the Secretary of the Army · US

Inventors

Stephen F. Bartolucci · Cohoes, US
Daniel Kaplan · Paris, FR

Key dates

Filing date	Jun 16, 2016
Grant date	Apr 11, 2017
Priority date	—
Expiry date	Jun 16, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10F77/12
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Processes for controlling the growth and thickness of two-dimensional transition metal dichalcogenides are provided. The process modifies an insulator substrate surface with an electron or ion beam to create charged areas on the substrate surface. The treated surface allows for hydroxylation of the charged species which serves as nucleation sites for the seed particles during chemical vapor deposition that promotes growth of thin layers of transition metal dichalcogenides.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.