Thermal doping of materials
US9620667B1 · kind B1 · utility
1Cited by
136References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2015 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Nov 18, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for doping a semiconductor material comprising the steps of providing a semiconductor material having a first and a second surface. A dopant precursor is applied on the first surface of the semiconductor material. A thermal energy beam is directed onto the second surface of the semiconductor material to pass through the semiconductor material and impinge upon the dopant precursor to dope the semiconductor material thereby.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.