Optoelectronic component and method of producing an optoelectronic component

US9620673B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Tobias Meyer · Durham, US
• Christian Leirer · Friedberg, DE
• Lorenzo Zini · Regensburg, DE
• Jürgen Off · Regensburg, DE
• Andreas Löffler · Neutraubling, DE
• Adam Bauer · Donaustauf, DE

Key dates

• Filing date: Mar 24, 2014
• Grant date: Apr 11, 2017
• Expiry date: Mar 24, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/10

Abstract

An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region.