CNT thin film transistor with high K polymeric dielectric

US9620728B2 · kind B2 · utility

Assignee

• National Research Council of Canada · CA

Inventors

• Naiying Du · Ottawa, CA
• Patrick Roland Lucien Malenfant · Ottawa, CA
• Zhao Li · Mississauga, CA
• Jacques Lefebvre · Voiron, FR
• Girjesh Dubey · Stuttgart, DE
• Gregory Lopinski · Ottawa, CA
• Shan Zou · Ottawa, CA

Key dates

• Filing date: Jan 30, 2015
• Grant date: Apr 11, 2017
• Expiry date: Jan 30, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/115

Abstract

A thin film transistor (TFT) has a gate electrode; a gate insulation layer, a semiconducting channel separated from the gate electrode by the gate insulation layer; a source electrode and a drain electrode. The gate insulation layer is a cross-linked cyanoethylated polyhydroxy polymer, e.g. a cross-linked cyanoethylated pullulan, having a high dielectric constant and the semiconducting channel has a network of semiconducting carbon nanotubes. The semiconducting channel is adhered to the gate insulation layer through a polymeric material. The carbon nanotubes adhere to the polymeric material and the polymeric material reacts or interacts with the gate insulation layer. TFTs have high mobilities while maintaining good on/off ratios.