Epitaxial wafer manufacturing device and manufacturing method
US9624602B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2012 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Jun 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02529
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An epitaxial wafer manufacturing device, including a shield (12), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (3). The shield has a substrate (12a) having an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space (K), and a thin film (12b) that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (8), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.