Silicon depletion modulators with enhanced slab doping
US9625746B2 · kind B2 · utility
11Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Dec 11, 2013 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Dec 11, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0151
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed herein are methods, structures, and devices for a silicon carrier-depletion based modulator with enhanced doping in at least part of slab regions between waveguide core and contact areas. Compared to prior designs, this modulator exhibits lower optical absorption loss and better modulation bandwidth without sacrificing the modulation efficiency when operating at comparable bandwidth settings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.