Photoresist with positive-resist behaviour, method for photochemical structuring thereof, method for the production of silanes and of silicic acid (hetero)poly(co)condensates with positive-resist behaviour and also silicic acid (hetero)poly(co)condensates
US9625817B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Feb 25, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a special heteropolymer, namely a silicic acid (hetero)poly(co)condensate with positive-resist behavior which is distinguished by polycondensation or copolycondensation of specially modified silanes. The invention relates likewise to monomeric silanes from which the corresponding heteropolymers, i.e. the silicic acid (hetero)poly(co)condensates, can be produced. The silicic acid (hetero)poly(co)condensates according to the invention can be used for a photoresist which has positive-resist behavior. In addition, the invention relates to corresponding methods both for the production of the silanes, the silicic acid (hetero)poly(co)condensates or a method for photochemical structuring of the photoresist according to the invention which is based on the silicic acid (hetero)poly(co)condensates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.