Block copolymer self-assembly for pattern density multiplication and rectification
US9626996B2 · kind B2 · utility
3Cited by
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19Claims
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Key dates
| Filing date | Jan 2, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Jul 11, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.