Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory
US9627024B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2014 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Sep 16, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of reading a memory cell of a magneto-resistive random access memory device, wherein the memory cell has a ferromagnetic free layer having a first magnetization orientation and a ferromagnetic reference layer, includes applying a first read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a first voltage generated by the memory cell in response to the first read current, generating a magnetic field adjacent to the memory cell, the magnetic field having a second magnetization orientation that is not parallel to the first magnetization orientation, while the magnetic field is being generated, applying a second read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a second voltage generated by the memory cell in response to the second read current, and determining a state of the memory cell based on the first voltage and the second voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.