Patent · US Active

Semiconductor device and method for manufacturing the same

US9627387B2 · kind B2 · utility

10Cited by
3References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 1, 2015
Grant dateApr 18, 2017
Priority date
Expiry dateDec 1, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/50

Abstract

A semiconductor device includes a semiconductor substrate including active portions including first and second dopant regions, word lines on the substrate and extending in a first direction to intersect the active portions, first and second bit lines on the substrate and extending in a second direction to intersect the word lines, and contact structures in regions between the word lines and between the first and second bit lines when viewed from a plan view. The first and second bit lines are connected to the first dopant regions. The contact structures are in contact with the second dopant regions, respectively. The contact structures each include a contact plug and a contact pad. The contact pads contact the second dopant regions. A separation distance between the contact plugs and the first bit lines is less than separation distance between the contact pads and the first bit lines.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.