Metallic oxide thin film transistor, array substrate and their manufacturing methods, display device
US9627414B2 · kind B2 · utility
0Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2014 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Dec 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a metallic oxide thin film transistor and its manufacturing method, an array substrate and its manufacturing method, as well as a display device, which is belong to the field of thin film transistor manufacturing technology. The method for manufacturing the metallic oxide thin film transistor comprises a step of forming patterns of an oxide active layer and an etch stopping layer through a one-time patterning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.