Oxide film, integrated circuit device, and methods of forming the same
US9627469B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Dec 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.