Method for manufacturing lateral double-diffused metal oxide semiconductor transistor
US9627513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Sep 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
The present disclosure relates to a lateral double-diffused metal oxide semiconductor transistor and a method for manufacturing the same. In the method, a high-voltage gate dielectric is formed at a surface of a semiconductor layer. A thin gate dielectric is formed above the substrate and has at least a portion adjacent to the high-voltage gate dielectric. A gate conductor is formed above the thin gate dielectric and the high-voltage gate dielectric. A first mask is used for patterning the gate conductor to define a first sidewall of the gate conductor above the thin gate dielectric. A second mask is used for patterning the gate conductor to define a second sidewall of the gate conductor at least partially above the high-voltage gate dielectric. Source and drain regions are formed to have a first doping type. The method further comprises doping through the first mask to form a body region of a second doping type. The second doping type is opposite to the first doping type. The method simplifies a manufacturer process and improves reliability of the resultant devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.