Method of manufacturing a monolayer graphene photodetector and monolayer graphene photodetector
US9627562B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Mar 20, 2014 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Mar 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In various embodiments of the present disclosure, there is provided a method of manufacturing a monolayer graphene photodetector, the method including forming a graphene quantum dot array in a graphene monolayer, and forming an electron trapping center in the graphene quantum dot array. Accordingly, a monolayer graphene photodetector is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.