Patent · US Active

Metamaterial structures for Q-switching in lasers

US9627840B2 · kind B2 · utility

2Cited by

5References

16Claims

0Family size

Assignee

INDIAN INSTITUTE OF TECHNOLOGY KANPUR · IN

Inventors

Ramakrishna Subramaniam Anantha · Kanpur, IN
Govind Singh · Ghaziabad, IN

Key dates

Filing date	Apr 17, 2013
Grant date	Apr 18, 2017
Priority date	—
Expiry date	Jun 12, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/24752
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Techniques described herein are generally related to metamaterial structures for Q-switching in laser systems. The various described techniques may be applied to methods, systems, devices or combinations thereof. Some described metamaterial structures may include a substrate and a first conductive layer disposed on a first surface of the substrate. A dielectric layer may be disposed on a first surface of the first conductive layer and a second conductive layer having a substantially symmetric geometric shape may be disposed on a first surface of the dielectric layer. The second conductive layer may cover a portion of the first surface of the dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.