Semiconductor light device and manufacturing method for the same
US9627849B2 · kind B2 · utility
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2References
4Claims
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Key dates
| Filing date | Mar 3, 2016 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Mar 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.