Patent · US Active

Sub-micron laser patterning of graphene and 2D materials

US9629251B2 · kind B2 · utility

1Cited by
0References
22Claims
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Inventors

Key dates

Filing dateDec 10, 2014
Grant dateApr 18, 2017
Priority date
Expiry dateAug 5, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49155
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

An appropriately configured pulsed laser is focused onto a graphene sheet and is used to form a desired pattern in the graphene. When the laser pulse strikes the graphene, it modifies the bonding state of the carbon atoms in the graphene lattice, acting as a “blade” and causing a separation in the graphene sheet at the site of the laser pulse without causing damage to the surrounding graphene. The width of the separation, or “cut” in the graphene sheet can be controlled by controlling characteristics of the laser pulse such as beam shape, beam intensity, pulse width, repetition rate, and wavelength to produce a graphene material having desired electrical, optical, thermal, and/or mechanical properties.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.