Semiconductor material, optical hydrogen generating device using same, and method of producing hydrogen
US9630169B2 · kind B2 · utility
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3References
4Claims
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Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Jul 22, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor material of the present invention is a semiconductor material including an oxynitride containing at least one element selected from the Group 4 elements and Group 5 elements. In the oxynitride, part of at least one selected from oxygen and nitrogen is substituted with carbon. Nb is preferable as the Group 5 element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.