Sensor stack structure with RKKY coupling layer between free layer and capping layer
US9633679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2014 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | May 6, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A reader stack, such as for a magnetic storage device, the stack having a top synthetic antiferromagnetic (SAF) layer, a magnetic capping layer adjacent to the top SAF layer, an RKKY coupling layer adjacent to the magnetic capping layer opposite the top SAF layer, and a free layer adjacent to the RKKY coupling layer opposite the magnetic capping layer. Also included is a method for biasing a free layer in a reader stack by providing an exchange coupling between the free layer and a top synthetic antiferromagnetic (SAF) layer using a layer having RKKY coupling property positioned between the free layer and the top SAF layer and a magnetic capping layer between the SAF layer and the layer having RKKY coupling property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.