Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same
US9633831B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 26, 2013 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Jan 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0242
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of polishing a sapphire substrate is provided, comprising: providing a substrate having an exposed sapphire surface; providing a chemical mechanical polishing slurry, wherein the chemical mechanical polishing slurry comprises, as initial components: colloidal silica abrasive, wherein the colloidal silica abrasive has a negative surface charge; and, wherein the colloidal silica abrasive exhibits a multimodal particle size distribution with a first particle size maximum between 2 and 25 nm; and, a second particle size maximum between 75 and 200 nm; optionally, a biocide; optionally, a nonionic defoaming agent; and, optionally, a pH adjuster. A chemical mechanical polishing composition for polishing an exposed sapphire surface is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.