Method for patterning a graphene layer and method for manufacturing a display substrate
US9633899B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2014 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Mar 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10128
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for patterning a graphene layer and a method for manufacturing a display substrate. The method for patterning a graphene layer comprises: forming an isolation layer on a graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned photoresist layer to form a patterned graphene layer; and removing the patterned isolation layer. In the method of the invention, the unfavorable condition of the prior art may be avoided that a graphene film sloughs off or a photoresist remains on a graphene film when a photoresist material is peeled off, and the product yield can be improved in the case that the production cost is controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.