Bipolar SCR
US9633993B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2016 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Apr 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
A high-voltage bipolar semiconductor controlled rectifier (SCR) includes an emitter region having a first polarity and overlying a base region having a second polarity different from the first polarity; a collector region having the first polarity and lying under the base region; an anode region having the second polarity; a first sinker region having the first polarity and contacting the collector region, wherein the anode region is between the first sinker region and the base region; and a second sinker region having the first polarity and contacting the collector region, the second sinker region lying between the anode region and the base region, wherein an extension of the anode region extends under a portion of the second sinker region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.