Semiconductor device and method for manufacturing semiconductor device
US9633997B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2014 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Sep 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, in which, in a density distribution of first conductivity type impurities in the first conductivity type region measured along a thickness direction of the semiconductor substrate, a local maximum value N1, a local minimum value N2, a local maximum value N3, and a density N4 are formed in this order from front surface side, a relationship of N1>N3>N2>N4 is satisfied, a relationship of N3/10>N2 is satisfied, and a distance “a” from the surface to the depth having the local maximum value N1 is larger than twice a distance “b” from the depth having the local maximum value N1 to the depth having the local minimum N2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.