Radiation detectors and methods of fabricating radiation detectors
US9634055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2015 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Apr 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1237
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps. The method also includes growing a passivation oxide layer on a top of the polished first surface and depositing patterned metal contacts on a top of the passivation oxide layer. The method further includes applying a protecting layer on the patterned deposited metal contacts, etching a second surface of the semiconductor and applying a monolithic cathode electrode on the etched second surface of the semiconductor. The method additionally includes removing the protecting layer from the patterned metal contacts on the first surface, wherein the patterned metal contacts are formed from one of (i) reactive metals and (ii) stiff-rigid metals for producing inter-band energy-levels in the passivation oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.