Semiconductor photomultiplier and readout method
US9634156B2 · kind B2 · utility
12Cited by
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38Claims
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Key dates
| Filing date | Nov 16, 2012 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Aug 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/206
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A silicon photomultiplier device is provided. The device comprises a plurality of photosensitive cells each having a photo-detector, a quench resistive load and a first stage capacitive load. The device is arranged in a three electrode connection configuration comprising first and second electrodes arranged to operably provide a biasing of the device and a third electrode operably used to readout a signal from the device. A second stage capacitive load is operably coupled to two or more photosensitive cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.