Complementary metal oxide heterojunction memory devices and methods related thereto
US9634247B2 · kind B2 · utility
3Cited by
0References
13Claims
0Family size
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Jun 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A resistive memory device is disclosed. The memory device comprises one or more metal oxide layers. An oxygen vacancy or ion concentrations of the one or more metal oxide layer is controlled in the formation and the operation of the memory device to provide robust memory operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.