Method of forming thin film using a heterostructured nickel compound
US9637511B2 · kind B2 · utility
2Cited by
10References
12Claims
0Family size
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Key dates
| Filing date | Feb 16, 2015 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Jun 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.