High-rate reactive sputtering of dielectric stoichiometric films
US9637814B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 20, 2015 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Aug 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3467
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of controlling a reactive sputter deposition process includes selecting a control process parameter for a target material and a reactive gas, the target material included in a target acting as a cathode, the reactive sputter deposition process involving forming a compound from a reaction between the target material and reactive gas species associated with the reactive gas in a vacuum chamber; establishing an operation regime for the reactive sputter deposition process for a given target power; and performing, based on the selected control process parameter and the established operation regime, the reactive sputter deposition process in a transition region between a metallic mode and a covered mode through a controlled pulsed reactive gas flow rate into the vacuum chamber, such that a stabilized reactive deposition of the compound on a substrate is achieved, the deposited compound on the substrate comprising a dielectric stoichiometric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.