Methods of manufacturing synthetic diamond material by microwave plasma enhanced chemical vapor deposition from a microwave generator and gas inlet(s) disposed opposite the growth surface area
US9637838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2011 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Dec 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm3 per minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.