Self-aligned repairing process for barrier layer
US9640428B2 · kind B2 · utility
1Cited by
1References
20Claims
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Key dates
| Filing date | Mar 22, 2016 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Mar 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A self-aligned repairing process for a barrier layer is provided. A repair layer is formed by chemical vapor deposition using an organometallic compound as a precursor gas. The precursor gas adsorbed on a dielectric layer exposed by defects in a barrier layer is transformed to an insulating metal oxide layer, and the precursor gas adsorbed on the barrier layer is transformed to a metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.