Low-cost complementary BiCMOS integration scheme

US9640528B2 · kind B2 · utility

Assignee

• Newport Fab, LLC · US

Inventors

• Edward Preisler · San Clemente, US
• Todd Thibeault · Brooks Road, US

Key dates

• Filing date: Mar 17, 2015
• Grant date: May 2, 2017
• Expiry date: Mar 17, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/60

Abstract

A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device is disclosed. The BiCMOS device includes a CMOS device in a CMOS region, a first CMOS well in the CMOS region, an NPN bipolar device in a bipolar region, a second CMOS well in the bipolar region, the second CMOS well being a collector sinker and being electrically connected to a sub-collector of the NPN bipolar device, where the first CMOS well in the CMOS region and the second CMOS well in the bipolar region form a p-n junction to provide electrical isolation between the CMOS device and the NPN bipolar device. The BiCMOS device further includes a PNP bipolar device having a sub-collector, the sub-collector of the PNP bipolar device being electrically connected to a third CMOS well.