Image sensor
US9640577B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2016 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Jan 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/812
Abstract
Example embodiments relate to an image sensor supporting a global shutter for minimizing image distortion. An example image sensor includes a semiconductor layer having a first surface and a second surface that are opposite to each other; a photosensitive device, which is formed in the semiconductor layer near the first surface and accumulates charges based on light incident via the second surface; a charge storage device, which is formed in the semiconductor layer near the first surface and temporarily stores charges accumulated by the photosensitive device; a first transmission transistor, which transmits charges accumulated by the photosensitive device to the charge storage device and includes a first gate formed on the first surface of the semiconductor layer; and a leakage photogenerated charge drain region, which is formed in the semiconductor layer near the second surface, is apart from the charge storage device, and is arranged above the charge storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.