Light emitting device and light emitting device array
US9640583B2 · kind B2 · utility
1Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2015 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Dec 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.