Diode device and method for manufacturing the same

US9640672B2 · kind B2 · utility

Assignees

• NATIONAL CENTRAL UNIVERSITY · TW
• Delta Electronics, Inc. · TW

Inventors

• Jen-Inn Chyi · New Taipei, TW
• Bo Wang · College Station, US
• Chun-Chieh Yang · New Taipei, TW
• Geng-Yen Lee · Daxi District, TW

Key dates

• Filing date: Feb 10, 2016
• Grant date: May 2, 2017
• Expiry date: Feb 10, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A diode device including a III-N compound layer is provided. The III-N compound layer has a channel region therein. A cathode region is located on the III-N compound layer. A first anode region is located on the III-N compound layer and extends into the III-N compound layer. The bottom of the first anode region is under the channel region. A second anode region is located on the III-N compound layer between the cathode region and the first anode region, and extends into the III-N compound material layer. The second anode region includes a high-energy barrier region. The high-energy barrier region adjoins a sidewall of the first anode region. A method for manufacturing a diode device is also provided.