Method for producing the P-N junction of a thin-film photovoltaic cell and corresponding method for producing a photovoltaic cell

US9640687B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Giovanni Altamura · Grenoble, FR
• Louis Grenet · Grenoble, FR
• Simon Perraud · Bandol, FR
• Frédéric Roux · Saint-Égrève, FR

Key dates

• Filing date: May 23, 2014
• Grant date: May 2, 2017
• Expiry date: May 23, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.