Patent · US Active

Method of manufacturing a low noise photodiode

US9640701B2 · kind B2 · utility

1Cited by

3References

14Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Olivier Gravrand · Saint-Égrève, FR
Johan Rothman · Grenoble, FR

Key dates

Filing date	Oct 21, 2015
Grant date	May 2, 2017
Priority date	—
Expiry date	Oct 21, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.