Semiconductor structure and method for manufacturing a semiconductor structure

US9640722B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• David Vaufrey · Grenoble, FR

Key dates

• Filing date: Jan 21, 2014
• Grant date: May 2, 2017
• Expiry date: Jan 21, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8162

Abstract

A semiconducting structure configured to emit electromagnetic radiation. The structure includes a first zone and a second zone with first and second types of conductivities respectively opposite to each other, the first and second zones being connected to each other to form a semiconducting junction. The first zone includes at least a first and a second part, the first and the second parts being separated from each other by an intermediate layer, as a spreading layer, extending approximately parallel to a junction plane along a major part of the junction. The spreading layer can cause spreading of carriers in the plane of the spreading layer.