Method of manufacturing optical semiconductor element
US9640944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2016 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Jul 29, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.