Method for synthesis of transition metal chalcogenide
US9644263B2 · kind B2 · utility
5Cited by
0References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Nov 4, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a method for synthesizing a transition metal chalcogenide, in which a transition metal chalcogenide is synthesized on a substrate by atomic layer deposition to sequentially supply a precursor of the transition metal chalcogenide and a reactant so as to have a predetermined synthesis thickness, the transition metal chalcogenide is synthesized at a process temperature of 450° C. or higher and 1000° C. or lower, and the transition metal chalcogenide is synthesized at a process temperature corresponding to the predetermined synthesis thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.