Etching solution for copper or a compound comprised mainly of copper
US9644274B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jun 28, 2012 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Jun 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/0338
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to an etching solution for copper or a compound comprised mainly of copper, wherein the etching solution contains (A) a maleic acid ion source and (B) a copper ion source, and an etching method using the etching solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.