Semiconductor photoelectrode, photoelectrochemical cell, hydrogen generation method, and energy system
US9644276B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2014 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Mar 20, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P20/133
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a semiconductor photoelectrode comprising a first conductive layer; a first n-type semiconductor layer disposed on the first conductive layer; and a second conductive layer covering the first n-type semiconductor layer. The first n-type semiconductor layer has a first n-type surface region and a second n-type surface region. The first n-type surface region is in contact with the first conductive layer. The second n-type surface region is in contact with the second conductive layer. The first n-type semiconductor layer is formed of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. The second conductive layer is light-transmissive. The second conductive layer is formed of a p-type oxide conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.