Large area nanopatterning method and apparatus
US9645504B2 · kind B2 · utility
12Cited by
29References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 9, 2012 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Feb 5, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/704
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a rotatable mask is used to image a radiation-sensitive material. Typically the rotatable mask comprises a cylinder. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact or close proximity with the substrate. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cylinder surface comprises metal nano holes or nanoparticles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.