Voltage controlled spin switches for low power applications
US9646666B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2016 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Jan 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Spin switch devices with voltage controlled magnetism in ultra-low power usage applications are disclosed. The spin switch devices may be configured to provide ultra-low power and ultra-high speed switching by directly controlling drain or gate electron spins via electric field induced magnetic anisotropy tuned with finite gate voltage. A lateral spin switch with voltage controlled magnetic drain is placed in an “OFF” or an “ON” state by controlling the gate voltage to be equal to 0 or greater than 0 volts respectively. A vertical spin switch with voltage controlled magnetic gate is placed in an “OFF” or an “ON” state by controlling a value of the gate voltage to be less than a threshold voltage or greater than the threshold voltage respectively. A voltage controlled complementary switch provides a very large gain by controlling a value of the gate voltage to be equal to 0 volts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.