Content addressable memory and memory cell thereof
US9646695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2016 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Mar 7, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell includes a set of storage switch units, a set of memory units, a set of comparison switch units and a discharge switch unit. The storage switch units are turned on by a turn-on signal transmitted by a word line. The memory units receive and store write data transmitted by a bit line or a source line when the storage switch units are on under a write mode. The comparison switch units are turned on by comparison data transmitted by comparison lines under a search mode. The discharge switch unit is turned on by a detection voltage under the search mode when the comparison data transmitted by the comparison lines is different from the write data stored in the memory units, so that the reference signal transmitted to the comparator is redirected to a reference voltage. A content addressable memory using the memory cell is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.