Group III arsenide material smoothing and chemical mechanical planarization processes

US9646841B1 · kind B1 · utility

Assignees

• International Business Machines Corporation · US
• JSR CORPORATION · JP

Inventors

• Henry A. Beveridge · Beacon, US
• Tatsuyoshi Kawamoto · Somalomo, CM
• Mahadevaiyer Krishnan · Hopewell Junction, US
• Yohei Oishi · White Plains, US
• Dinesh Kumar Penigalapati · Guilderland, US
• Rachel S. Steiner · Kiryat Yam, IL
• James A. Tornello · Somers, US
• Tatsuya Yamanaka · Somalomo, CM

Key dates

• Filing date: May 20, 2016
• Grant date: May 9, 2017
• Expiry date: May 20, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02647
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A chemical mechanical planarization for a Group III arsenide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. A Group III arsenide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The Group III arsenide material is planarized using at least one slurry composition to form coplanar surfaces of the Group III arsenide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the Group III arsenide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of an arsine gas.