Germanium smoothing and chemical mechanical planarization processes

US9646842B1 · kind B1 · utility

Assignees

• International Business Machines Corporation · US
• JSR CORPORATION · JP

Inventors

• Tatsuyoshi Kawamoto · Somalomo, CM
• Mahadevaiyer Krishnan · Hopewell Junction, US
• Yohei Oishi · White Plains, US
• Dinesh Kumar Penigalapati · Guilderland, US
• Rachel S. Steiner · Kiryat Yam, IL
• James A. Tornello · Somers, US
• Tatsuya Yamanaka · Somalomo, CM

Key dates

• Filing date: May 20, 2016
• Grant date: May 9, 2017
• Expiry date: May 20, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/30625
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.