Semiconductor device having solder joint and method of forming the same
US9646945B2 · kind B2 · utility
4Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Apr 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/8181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device having a high-reliability solder joint. The semiconductor device includes a high-temperature solder formed on a conductive pad. A low-temperature solder having a lower melting point than the high-temperature solder is formed on the high-temperature solder. A barrier layer is formed between the high-temperature solder and the low-temperature solder. An Sn content of the high-temperature solder is higher than that of the low-temperature solder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.