Monolithically integrated transistors for a buck converter using source down MOSFET
US9646965B2 · kind B2 · utility
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5References
9Claims
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Key dates
| Filing date | Jan 29, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Jan 29, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated semiconductor transistor chip for use in a buck converter includes a high side transistor formed on the chip and comprising a laterally diffused metal oxide semiconductor (LDMOS) transistor and a low side transistor formed on the chip and comprising a source down metal oxide semiconductor field effect transistor (MOSFET). The chip also includes a substrate of the chip for use as a source for the low side transistor and an n-doped well for isolation of the high side transistor from the source of the low side transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.