Semiconductor devices including nanowire capacitors and fabricating methods thereof
US9646971B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | May 24, 2016 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | May 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and fabricating methods thereof are provided. A semiconductor device may include a substrate, a metal layer on the substrate, a seed layer on the metal layer, a nanowire including a pillar shape on the seed layer, a dielectric film conformally covering the nanowire, and an electrode film on the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.